Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

A. V. Gopal, H. Yoshida, T. Simoyama, N. Georgiev, T. Mozume, H. Ishikawa
  • Applied Physics Letters, June 2002, American Institute of Physics
  • DOI: 10.1063/1.1489479

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