Mechanism of atomic layer deposition of SiO2 on the silicon (100)-2×1 surface using SiCl4 and H2O as precursors

Jeung Ku Kang, Charles B. Musgrave
  • Journal of Applied Physics, March 2002, American Institute of Physics
  • DOI: 10.1063/1.1436294

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1063/1.1436294

The following have contributed to this page: Charles Musgrave

In partnership with: