What is it about?
The asymmetric Gaussian model minimizes the number of parameters needed, which are the one center position and low- and high-Gaussian distribution widths, compared with the assignment method for multiple purely Gaussian peaks.
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Why is it important?
Experimentally, often asymmetrical peak line shapes were observed in infrared dielectric function spectra. From this, multiple peak assignment was frequently required. however the stoichiometry was a subject of general interest. This indicates that it is ridiculous to decompose the peak into multiple peaks. Therefore, we developed a model which was extended from the Gauss model and can express asymmetrical peak line shape.
Perspectives
The asymmetirc Gaussian model successfully described the actual infrared dielectric function spectra for thermally grown silicon dioxide films. Indeed, the model minimizes the required parameters, only which are center position, low- and high-side Gaussian distribution widths. Possible interpretation on the basis of the central and noncentral force network model is that the asymmetric distribution on the dielectric function arises from symmetrical distribution of the bond angles of a random SiO4 tetrahedra network.
Dr Kenji Ishikawa
Nagoya University
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This page is a summary of: Asymmetric peak line shape of infrared dielectric function spectra for thermally grown silicon dioxide films, Journal of Applied Physics, December 2000, American Institute of Physics,
DOI: 10.1063/1.1325377.
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