What is it about?
In this work, a low-temperature buffer-layer-assisted growth strategy is introduced to realize γ-CuI by pulsed laser deposition (PLD) with significantly improved structural quality and electrical transport properties compared to the state-of-the-art. By controlling the growth temperature, we can manipulate the rotation domain structures, control the hole concentration from 1014 cm−3 to 1019 cm−3 and achieve mobility 25 cm2/Vs being similar to that of bulk CuI.
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Why is it important?
CuI is an extremely promising transparent p-type conducting material (TCM). The controlled growth and customized tuning of the electrical properties of copper(I) iodide thin films (CuI) is currently still a major challenge that must be overcome to enable applications in transparent electronics. This strategy not only enables fast, high-quality CuI film preparation, but also to tailor their electrical properties for integration with n-type semiconductors in transparent electronic circuits.
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This page is a summary of: Low-temperature buffer layer-assisted heteroepitaxial growth of γ-CuI thin films by pulsed laser deposition: Tailoring electrical properties, Applied Physics Letters, January 2025, American Institute of Physics,
DOI: 10.1063/5.0250124.
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