Defects in Ge and GeSn semiconductors and their impact on optoelectronic properties of the materials

What is it about?

This article is about GeSn, a new semiconductor material that shows great potential for mid-infrared technologies, such as sensors, lasers, and other devices. GeSn could replace more expensive materials currently used in silicon-based photonics, making these technologies more accessible. Over the last decade, researchers have overcome many challenges to make high-quality GeSn, but defects in the material still limit its performance. These defects affect key properties like how well it conducts electricity and how long charges last, which are crucial for building reliable devices. The review summarizes the progress in making and studying GeSn, explains how defects impact its performance, and suggests ways to improve it for future applications.

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Photo by Thanh Nguyen on Unsplash

Photo by Thanh Nguyen on Unsplash

Why is it important?

This work consolidates scattered knowledge from the scientific literature and provides a solid foundation for researchers aiming to explore the optoelectronic properties of Ge and GeSn. This review also provides essential knowledge on the GeSn system for researchers looking to enter the field.