What is it about?
While most efforts in semiconductor research focus on minimizing and controlling defects, we find, surprisingly, that gallium vacancy, a common defect in Ga2O3, created by high-temperature oxygen annealing, may be responsible for a dramatic increase of Mg doping density in Ga2O3 through the diffusion process. This resulted in a remarkably higher breakdown voltage in the Mg-doped current blocking layer in Ga2O3, opening up new avenues for the realization of various high-power vertical Ga2O3 electron devices. Most importantly, we're seeing a promising trend where a higher Mg diffused doping unambiguously resulted in a higher vertical blocking voltage.
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Why is it important?
The novel doping approach can help to realize next-generation high-voltage vertical gallium oxide power transistors that can boost EV charging and grid modernization.
Perspectives
I hope this paper inspires others to try something adventurous.
Ke Zeng
University of North Carolina at Charlotte
Read the Original
This page is a summary of: Simultaneous drive-in of Mg and disassociation of Mg-H complex in Ga2O3 by oxygen annealing achieving remarkable current blocking, Applied Physics Letters, May 2024, American Institute of Physics,
DOI: 10.1063/5.0190091.
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