What is it about?

We have shown an alternate approach to stabilise AFE phase

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Why is it important?

In the PbTiO3-PbZrO3-SrTiO3-SrZrO3 quaternary phase, compositions that are in the antiferroelectric(AFE)-ferroelectric(FE) phase boundary are ideal candidates for micro-actuator applications. However, in thin films, this phase boundary is reported to significantly shift to zirconium-rich region. This uncertainty has precluded their applications in micro-actuators thus far. In this manuscript, we have shown the efficacy of inducing structural distortion, through B-site acceptor doping, as a means to stabilize antiferroelectric tetragonal phase in a typical composition that lies in the phase coexistence region in this AFE-FE phase boundary. Results presented in this manuscript show the potential of this approach in improving their device applicability.

Perspectives

Writing this article was a great pleasure as it has co-authors with whom I have had long standing collaborations

V Kumar

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This page is a summary of: Improved piezoelectric properties through manganese-doping in phase coexistence region in lead strontium zirconate titanate (PSZT) thin films, Journal of Applied Physics, April 2023, American Institute of Physics,
DOI: 10.1063/5.0145281.
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