What is it about?
We assess the cycling stability under unipolar loading for the interaction between dislocations with [001] line vector and engineered ferroelectric domain walls. We find that a high large-signal piezoelectric strain coefficient and dielectric permittivity can be obtained without degradation if the topological interaction between domain wall and dislocation line is well chosen to utilize transient and permanent pinning sites. Our findings demonstrate the potential of dislocation engineering for the manipulation of the mobility of domain walls in bulk ferroelectrics.
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Photo by Pawel Czerwinski on Unsplash
Why is it important?
Providing a paradigm for the design of ferroelectrics via dislocation technology.
Perspectives
Boosting the dislocation technology in ferroelectrics.
Fangping Zhuo
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This page is a summary of: Fatigue-free dielectric and piezoelectric response in single-crystal BaTiO3 tuned by dislocation imprint, Applied Physics Letters, March 2023, American Institute of Physics,
DOI: 10.1063/5.0143331.
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