What is it about?
Thermal resistance is an important parameter to model the self-heating within the device. We have shown an accurate method to characterize the thermal resistance without affecting the trapping state. We have used the substrate stressing technique to characterize the thermal resistance. The extracted thermal resistance is validated using a compact model and we observe a good match.
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Why is it important?
As in GaN HEMTs, trapping and self-heating co-occur, and it is difficult to extract the parameters related to this phenomenon independently. Hence, we propose a method to extract the parameters related to both the phenomenon accurately and independently in this letter.
Perspectives
It was a great experience to co-relate the TCAD and experimental data to understand the device insights.
Ajay Shanbhag
Indian Institute of Technology Madras
Read the Original
This page is a summary of: An accurate method to extract thermal resistance of GaN-on-Si HEMTs, Frontiers in Human Neuroscience, May 2023, American Institute of Physics,
DOI: 10.1063/5.0141198.
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