What is it about?
Indium arsenide (InAs) nanostructures deposited on gallium arsenide (GaAs) substrates have interesting optoelectronic properties but, this system is also prone to defect formation due to the large lattice mismatch. In this work, we introduce a novel nanopillar patterned GaAs template with pillar tops surrounded by a silicon nitride mask. Such a configuration enables the nanopillar tops to mimic nanoscale growth sites. InAs quantum dots (QDs) deposited by molecular beam epitaxy on such substrates are shown to be defect free under optimized growth conditions. This observation and the efficacy of InAs QD surfaces at relieving lattice strain are corroborated by a detailed electron microscopic investigation.
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Why is it important?
A major outcome of this work is the formation of defect free InAs QDs on the GaAs(111)A substrates. This was hitherto proven unachievable using planar bulk substates of the same orientation. Additionally, the ability to form QDs with such high areal densities predetermined by selective area sites opens avenues for new optoelectronic device applications.
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This page is a summary of: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A, Journal of Applied Physics, November 2022, American Institute of Physics, DOI: 10.1063/5.0121559.
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