What is it about?
The relentless scaling of semiconductor devices pushes the doping level far above the equilibrium solubility, yet the doped material must be sufficiently stable for subsequent device fabrication and operation. We use microwave annealing to selectively activate metastable phosphorus-vacancy clusters by interacting with their dipole moments, while keeping lattice heating below 700 °C. Compared with conventional rapid thermal annealing, microwave annealing can result in 25% lower sheet resistance and three times higher stability at 700 °C.
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Why is it important?
Microwave dopant activation may enable the silicon CMOS technology to scale from 3 nm to 2 nm and from FinFETs to gate-all-around 3D-stacked nanosheet FETs.
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This page is a summary of: Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit, Applied Physics Letters, August 2022, American Institute of Physics,
DOI: 10.1063/5.0099083.
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