What is it about?
Efficient red LEDs made from InGaN semiconductors
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Why is it important?
They have achieved EQE 4.3% at 20 mA (<3 V). The color purity is excellent.
Perspectives
Those samples are the basis of micro-LEDs for AR &VR applications.
Kazuhiro Ohkawa
King Abdullah University of Science and Technology
Read the Original
This page is a summary of: Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2, AIP Advances, June 2022, American Institute of Physics,
DOI: 10.1063/5.0097761.
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