What is it about?
To improve the performance of AlGaN or GaN based MSM detectors
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Why is it important?
GaN or AlGaN is wide bandgap material especially preferred for designing recent UV detection applications and research is going on to improve the performance matrices of UV detectors.
Perspectives
Transport of carriers severely affect the performance of AlGaN or GaN MSM detectors. therefore effect of mobility models using TCAD simulator has been studied in the recent paper.
Dr. Harpreet Kaur
Chitkara University
Read the Original
This page is a summary of: Studying the effect of mobility models using TCAD simulation on the performance of AlGaN/AlN metal semiconductor metal metector, January 2022, American Institute of Physics,
DOI: 10.1063/5.0095533.
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