Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance

What is it about?

This paper deals with the high-frequency investigation of organic thin-film transistors fabricated in the two different architectures bottom-gate/top-contact (staggered) and bottom-gate/bottom-contact (coplanar). A high-frequency characterization of these transistors was done by S-parameter measurements and calculating the well-known small-signal gain h21 based on these measurements. The two transistor architectures behave differently under high-frequency conditions due to their different gate-to-contact overlap regions. For an investigation of these influences, several transistors with equal channel lengths were fabricated, but with a varying degree of asymmetry in the gate-to-drain and the gate-to-source overlap lengths. For a comprehensive analysis of the differences in the overlap regions, we use a customized compact model to reproduce the measured h21 curves of all of the transistors. In our paper, we describe the compact model in detail and analyze the effects that we see in the measured h21 curves.

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