What is it about?

The static dielectric properties of α-SiTe, β-SiTe, and RX-SiTe2 are investigated using the density functional perturbation theory method. The optical properties are studied under three different methods: standard DFT, many-body Green's functions, and the Bethe–Salpeter equation. Our calculations show that the SiTe compounds possess extremely high dielectric values (>100) in the optical regime, which are among the highest of layered materials.

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Why is it important?

Our findings show that the proposed materials have potential applications in optoelectronics because of the large dielectric values thus suggesting them as excellent light absorbents in the corresponding frequencies.


I hope this article will help the exploration of high k materials. Also, Raman intensity analysis will be useful for the experimental realization.

Romakanta Bhattarai
University of Memphis

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This page is a summary of: Optical and electronic properties of SiTex (x = 1, 2) from first-principles, Journal of Applied Physics, June 2021, American Institute of Physics, DOI: 10.1063/5.0054391.
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