What is it about?
We grew different aluminum gallium oxide buffers for the subsequent deposition of conductive tin-doped alpha gallium oxides, whose properties were then examined.
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Why is it important?
High concentration Al seems to increase the twisting and titling of the gallium oxide crystal. Rough surface seems to reduce the twisting.
Perspectives
This is a rather careful and qualitive work. We let the reciprocal space map measurement of the 100 nm stack go automatically overnight and were surprise next morning when seeing how the alpha-(AlxGa1-x)2O3 peaks line up. Rather beautiful.
Giang T. Dang
Kochi Koka Daigaku
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This page is a summary of: α-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition, APL Materials, October 2020, American Institute of Physics,
DOI: 10.1063/5.0023041.
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