What is it about?
The threshold current density difference for the forward voltage degradation is found to be able to be explained by the structural differences in single Shockley-type stacking faults.
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Why is it important?
Interesting insights are provided to improve deeper understanding of the threshold current density difference for the forward voltage degradation, by revealing structural differences in single Shockley-type stacking faults, which are considered one of the bottlenecks to commercialize SiC power devices with high reliability.
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This page is a summary of: Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes, Journal of Applied Physics, August 2020, American Institute of Physics,
DOI: 10.1063/5.0021764.
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