What is it about?

The whole dynamical process from the initial vertical carrier injection to the channel formation in a top-contact and bottom-gate thin film transistor was observed with time-domain reflectometry. And in this article, we spend much effort on describing the pre-channel formation process, which is clearly answering the finite rise time of the TFT.

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Why is it important?

This paper clearly answering and visualizing the cause of the finite rise time of TFT from the viewpoint of physics. This paper describes the whole device dynamics from t = 0 to 10^-3 s. Time variation of the distribution of injected holes in TFT is visually presented in this paper.


In the next paper, we will discuss the real-time behavior of the channel formation process in TFT. We are ready to analyze the dynamical process of other thin film devices such as OLED, OPV.

Masatoshi Sakai
Chiba Daigaku

Read the Original

This page is a summary of: Carrier-injection and succeeding pre-channel formation in organic thin-film transistor observed with time-domain reflectometry, Journal of Applied Physics, August 2020, American Institute of Physics, DOI: 10.1063/5.0011150.
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