What is it about?
Tunnel FET based on TMD materials are prospective candidate for low power applications in future nanoelectronics. Device optimization of such devices is being present in this work through an organized methodological approach. The results and their implications are explained from device perspective as well.
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Why is it important?
A complete self-consistent methodology for finding transport characteristics using coupled Hamiltonian is absent in previous studies that can help the reader better visualize the device physics and optimize such devices.
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This page is a summary of: Quantum mechanical analysis of 2D transition metal dichalcogenide material based vertical heterojunction tunnel FET, AIP Advances, April 2020, American Institute of Physics, DOI: 10.1063/1.5142188.
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