What is it about?
This analytical method for the study of semiconductors allows describing the exchange of charge carriers between bands and defects in function of time. From measurements of conductivity, parameters such as defect densities, ionization rates, cross-sections (for example of recombination or capture by defect traps) and carrier generation rates can be obtained and in this way to perform the sample characterization.
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Why is it important?
This procedure a useful tool for verifying models of semiconductor band structures and for characterizing a material from electrical transport measurements.
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This page is a summary of: Non-steady state transport of charge carriers. An approach based on invariant embedding method, Journal of Applied Physics, January 2020, American Institute of Physics,
DOI: 10.1063/1.5136090.
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