What is it about?
A fast and reliable magnetic memory cell device is demonstrated for cryogenic memory. The speed of 2-100ns and reliability of 1e-4 error rate and 4.2K functionality will make it suitable building element for an promising alternative of existing memory technologies that may barely work at such low temperature. It is of essential importance for advanced computing complexity that is usually made with cryogenic quantum devices.
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This page is a summary of: A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory, Frontiers in Human Neuroscience, January 2020, American Institute of Physics,
DOI: 10.1063/1.5129553.
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