What is it about?
Propagation losses degrade the performance of large acoustic wave devices used in RF receivers. This works describes modifications made to the 2D electron gas formed by a AlGaN layer on GaN to be able to generate amplification in surface acoustic waves that propagate in GaN on sapphire.
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Why is it important?
We demonstrate a AlGaN barrier composition that enables acoustic loss compensation to support long time delays at RF frequencies.
Perspectives
This field has a long history, and finding a suitable material that is both a strong piezoelectric and has usable semiconducting properties has always been a challenge. Hopefully this work will provoke thought for future device integration.
Siddhartha Ghosh
Massachusetts Institute of Technology
Read the Original
This page is a summary of: Acoustoelectric amplification of Rayleigh waves in low sheet density AlGaN/GaN heterostructures on sapphire, Applied Physics Letters, February 2019, American Institute of Physics,
DOI: 10.1063/1.5080450.
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