Growth of graphene underlayers by chemical vapor deposition

Mopeli Fabiane, Saleh Khamlich, Abdulhakeem Bello, Julien Dangbegnon, Damilola Momodu, A. T. Charlie Johnson, Ncholu Manyala
  • AIP Advances, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4834975

Growth of graphene underlayers by chemical vapor deposition

What is it about?

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass

Why is it important?

The FE-SEM and AFM images of the inverse transfer (IT) samples clearly showed the hexagonal 3D islands with monolayer graphene below them - an inverted wedding cake-like structure. The concentric nature of the multilayer island suggests that all the layers in an island nucleate at a common site, perhaps associated with an impurity or special topography.

The following have contributed to this page: Dr Abdulhakeem Bello