What is it about?
We use a new transistor architecture (patented in 2007) to shows that field effect transistor made of a material with very low mobility (10^-3) can switch in microseconds and deliver high current density of 3A/cm^2.
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Why is it important?
We believe that this is a world record for a transistor architecture. Namely, if we scale the transistor performance by the mobility of the semiconductor used than this transistor is among the best ever made.
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This page is a summary of: Fast switching characteristics in vertical organic field effect transistors, Applied Physics Letters, August 2013, American Institute of Physics,
DOI: 10.1063/1.4818585.
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