Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

O. Persson, E. Lind, E. Lundgren, J. Rubio-Zuazo, G. R. Castro, L.-E. Wernersson, A. Mikkelsen, R. Timm
  • AIP Advances, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4817575
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