In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

  • X. Liu, R. Yeluri, J. Kim, S. Lal, A. Raman, C. Lund, S. Wienecke, J. Lu, M. Laurent, S. Keller, U. K. Mishra
  • Applied Physics Letters, July 2013, American Institute of Physics
  • DOI: 10.1063/1.4817385

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http://dx.doi.org/10.1063/1.4817385

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