Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth

  • Mohan Nagaboopathy, Narayanan Ravishankar, Srinivasan Raghavan
  • Applied Physics Letters, July 2013, American Institute of Physics
  • DOI: 10.1063/1.4816742

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http://dx.doi.org/10.1063/1.4816742

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