Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

Yao-Feng Chang, Li Ji, Zhuo-Jie Wu, Fei Zhou, Yanzhen Wang, Fei Xue, Burt Fowler, Edward T. Yu, Paul S. Ho, Jack C. Lee
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4816162

Bi-modal failure phenomenon in resistive switching memory

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Bi-model of failure phenomenon in

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