Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memoryYao-Feng Chang, Li Ji, Zhuo-Jie Wu, Fei Zhou, Yanzhen Wang, Fei Xue, Burt Fowler, Edward T. Yu, Paul S. Ho, Jack C. Lee
- Applied Physics Letters, January 2013, American Institute of Physics
- DOI: 10.1063/1.4816162
Bi-modal failure phenomenon in resistive switching memory
What is it about?
Bi-model of failure phenomenon in