Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs∕GaAs multiple quantum wells

Qi Wang, Zhigang Jia, Xiaomin Ren, Yingce Yan, Zhiqiang Bian, Xia Zhang, Shiwei Cai, Yongqing Huang
  • AIP Advances, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4815971
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