Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

M. R. Holzworth, N. G. Rudawski, P. G. Whiting, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, E. Patrick, M. E. Law
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4813535
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