Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

Matthias Wieneke, Hartmut Witte, Karsten Lange, Martin Feneberg, Armin Dadgar, Alois Krost, Jürgen Bläsing, Rüdiger Goldhahn
  • Applied Physics Letters, July 2013, American Institute of Physics
  • DOI: 10.1063/1.4812666
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The following have contributed to this page: Armin Dadgar