Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

  • M. Sawicka, G. Muziol, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J. L. Weyher, C. Chèze, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski
  • Applied Physics Letters, June 2013, American Institute of Physics
  • DOI: 10.1063/1.4812201

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http://dx.doi.org/10.1063/1.4812201

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