Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study

Kanchan Ulman, Rajesh Sathiyanarayanan, R. K. Pandey, K. V. R. M. Murali, Shobhana Narasimhan
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4811453