Erratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113, 113506 (2013)]

E. N. Sgourou, D. Timerkaeva, C. A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, P. Pochet
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4811367