Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

M. Yazdanfar, I. G. Ivanov, H. Pedersen, O. Kordina, E. Janzén
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4809928
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