Virtual GaN substrates via Sc[sub 2]O[sub 3]/Y[sub 2]O[sub 3] buffers on Si(111): Transmission electron microscopy characterization of growth defects

T. Niermann, D. Zengler, L. Tarnawska, P. Stork, T. Schroeder, M. Lehmann
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4809561