Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Lorenzo Lugani, Jean-François Carlin, Marcel A. Py, Denis Martin, Francesca Rossi, Giancarlo Salviati, Patrick Herfurth, Erhard Kohn, Jürgen Bläsing, Alois Krost, Nicolas Grandjean
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4808260