Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory

L. Tarnawska, J. Dabrowski, T. Grzela, M. Lehmann, T. Niermann, R. Paszkiewicz, P. Storck, T. Schroeder
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4807907