Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

S. Essig, O. Moutanabbir, A. Wekkeli, H. Nahme, E. Oliva, A. W. Bett, F. Dimroth
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4807905