Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

  • A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, C. Pang, H. Benisty
  • Applied Physics Letters, May 2013, American Institute of Physics
  • DOI: 10.1063/1.4807890

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