Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

J. Mantey, W. Hsu, J. James, E. U. Onyegam, S. Guchhait, S. K. Banerjee
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4807500