Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

G. V. Luong, S. Wirths, S. Stefanov, B. Holländer, J. Schubert, J. C. Conde, T. Stoica, U. Breuer, S. Chiussi, M. Goryll, D. Buca, S. Mantl
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4807001
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