Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

  • D. W. Cardwell, A. Sasikumar, A. R. Arehart, S. W. Kaun, J. Lu, S. Keller, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
  • Applied Physics Letters, May 2013, American Institute of Physics
  • DOI: 10.1063/1.4806980

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