Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

Tomasz A. Krajewski, Peter Stallinga, Eunika Zielony, Krzysztof Goscinski, Piotr Kruszewski, Lukasz Wachnicki, Timo Aschenbrenner, Detlef Hommel, Elzbieta Guziewicz, Marek Godlewski
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4805655
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