Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

  • Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng
  • Applied Physics Letters, May 2013, American Institute of Physics
  • DOI: 10.1063/1.4805354

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http://dx.doi.org/10.1063/1.4805354

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