Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Yue Yang, Kain Lu Low, Wei Wang, Pengfei Guo, Lanxiang Wang, Genquan Han, Yee-Chia Yeo
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4805051