Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

C. Villeneuve-Faure, K. Makasheva, C. Bonafos, B. Despax, L. Boudou, P. Pons, G. Teyssedre
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4805026