Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study

Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4804665