Low-temperature epitaxial growth of high quality Si1−xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition

Ke Tao, Yoshinori Kurosawa, Jun-ichi Hanna
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4804362
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