Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, P. Boucaud, M. de Kersauson, M. Prost, A. Ghrib, M. El Kurdi, S. Sauvage, G. Beaudoin, L. Largeau, O. Mauguin, R. Jakomin
  • Journal of Applied Physics, May 2013, American Institute of Physics
  • DOI: 10.1063/1.4804266
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